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SIM(5)			       File Formats Manual			  SIM(5)

NAME
     sim - format of .sim files read by esim, crystal, etc.

DESCRIPTION
     The simulation tools crystal(1) and esim(1) accept a circuit description in
     .sim  format.   There  is a single .sim file for the entire circuit, unlike
     Magic's ext(5) format in which there is a .ext file for every cell in a hi-
     erarchical design.

     A .sim file consists of a series of lines, each of which begins with a  key
     letter.   The  key  letter beginning a line determines how the remainder of
     the line is interpreted.  The following are the list of key letters  under-
     stood.

     | units: s  tech: tech format: MIT|LBL|SU
	    If	present, this must be the first line in the .sim file.	It iden-
	    tifies the technology of this circuit as tech and gives a scale fac-
	    tor for units of linear dimension as s.  All linear  dimensions  ap-
	    pearing  in  the .sim file are multiplied by s to give centimicrons.
	    The format field signifies the sim variant. MIT and SU are	compati-
	    ble  and  understood  by  all  tools. LBL is understood only by gem-
	    ini(1).

     type  g  s  d  l  w  x  y	g=gattrs  s=sattrs  d=dattrs
	    Defines a transistor of type type.	Currently, type may be	e  or  d
	    for  NMOS,	or  p  or n for CMOS.  The name of the node to which the
	    gate, source, and drain of the transistor are connected are given by
	    g, s, and d respectively.  The length and width  of  the  transistor
	    are  l  and  w.   The  next  two  tokens, x and y, are optional.  If
	    present, they give the location of a point inside the gate region of
	    the transistor.  The last three tokens are the attribute  lists  for
	    the  transistor  gate,  source,  and  drain.   If  no attributes are
	    present for a particular terminal, the corresponding attribute  list
	    may be absent (i.e, there may be no g= field at all).  The attribute
	    lists  gattrs,  etc. are comma-separated lists of labels.  The label
	    names should not include any spaces, although some tools can  accept
	    label  names  with spaces if they are enclosed in double quotes.  In
	    version 6.4.5 and later the default format produced  by  ext2sim  is
	    SU. In this format the attribute of the gate starting with S_ is the
	    substrate  node  of  the fet. The attributes of the gate, and source
	    and substrate starting with  A_,  P_  are  the  area  and  perimeter
	    (summed  for  that	node  only once) of the source and drain respec-
	    tively.  This addition to the format is backwards compatible.

     C n1 n2 cap
	    Defines a capacitor between nodes n1 and n2.  The value of	the  ca-
	    pacitor is cap femtofarads.  NOTE: since many analysis tools compute
	    transistor	gate  capacitance  themselves from the transistor's area
	    and perimeter, the capacitance between a node and  substrate  (GND!)
	    normally does not include the capacitance from transistor gates con-
	    nected  to	that node.  If the .sim file was produced by ext2sim(1),
	    check the technology file that was used to produce the original .ext
	    files to see whether transistor gate capacitance is included or  ex-
	    cluded;  see  ``Magic  Maintainer's Manual #2: The Technology File''
	    for details.

     R node res
	    Defines the lumped resistance of node node to  be  res  ohms.   This
	    construct is only interpreted by a few programs.

     r node1 node2 res
	    Defines an explicit resistor between nodes node1 and node2 of resis-
	    tance  res	ohms.	This construct is only interpreted by a few pro-
	    grams.

     N node darea dperim parea pperim marea mperim
	    As an alternative to computed capacitances, some  tools  expect  the
	    total perimeter and area of the polysilicon, diffusion, and metal in
	    each  node	to  be reported in the .sim file.  The N construct asso-
	    ciates diffusion area darea (in square centimicrons)  and  diffusion
	    perimeter  dperim (in centimicrons) with node node, polysilicon area
	    parea and perimeter pperim,  and  metal  area  marea  and  perimeter
	    mperim.  This construct is technology dependent and obsolete.

     A node attr
	    Associates	attribute  attr  for  node node.  The string attr should
	    contain no blanks.

     = node1 node2
	    Each node in a .sim file is named implicitly by having it appear  in
	    a  transistor  definition.	 All node names appearing in a .sim file
	    are assumed to be distinct.  Some tools, such as esim(1),  recognize
	    aliases for node names.  The = construct allows the name node2 to be
	    defined as an alias for the name node1.  Aliases defined by means of
	    this construct may not appear anywhere else in the .sim file.

SEE ALSO
     crystal(1), esim(1), ext2sim(1), sim2spice(1), ext(5)

4th Berkeley Distribution						  SIM(5)

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